Literature: Thermoelectric materials and devices
Chemical bonding-driven dopability and point defect engineering enable improved n-type GeSe thermoelectrics
Metadata from OpenAlex, exported on 9 September 2026. It is the provider's report, not verified here.
What the provider reports
- Authors
- Xinjian Li, Zeng Yi, Siyuan Song, Huangshui Ma, Tu Lyu, Xiaohuan Luo, Haoran Luo, Moran Wang, Hua‐Lu Zhuang, Chaohua Zhang, F T Liu, Siqi Huo, Min Hong, Lipeng Hu
- Published
- 16 June 2026
- Venue
- Science China Materials
- DOI
- 10.1007/s40843-026-4168-7
- OpenAlex id
- W7165476951
- Primary topic, as reported
- Advanced Thermoelectric Materials and Devices (T10440)
- Access, as reported
- Open access: hybrid; licence cc-by. Reported access is not verified reuse permission.
- Retraction, as reported
- Not reported retracted
- Landing page
- https://doi.org/10.1007/s40843-026-4168-7
- PDF link, as reported
- https://link.springer.com/content/pdf/10.1007/s40843-026-4168-7.pdf (a link the provider reported, not an acquired source)
- In this collection because
- it matched the collection rule at export
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